Adrien ILLE

Secteur : Électronique et microélectronique

Thin gate oxides reliability of deep sub-micron CMOS technologies under ESD stress.

Publications and Communications:

Ille A., Stadler W., Pompl T., Gossner H., Brodbeck T., Esmark K., Riess P., Alvarez D., Chatty K., Gauthier R., and Bravaix A. Reliability aspects of gate oxide under ESD pulse stress. In IEEE EOS/ESD Symposium Proceedings, pages 328–337, 2007. [Best Student Paper Award]

Ille A., Stadler W., Gossner H., Brodbeck T., Pompl T., and Bravaix A. Thin gate oxides time-to-breakdown in the ESD time domain and consequences for applications. In International Electrostatic Discharge Workshop, pages 176–186, 2007.

Ille A., Stadler W., Kerber A., Pompl T., Brodbeck T., Esmark K., and Bravaix A. Ultra-thin gate oxide reliability in the ESD time domain. In 17th annual Reliability Center for Electronic Components of Japan Symposium, number ISSN 1349-6379, pages 75–84, 2007.

Ille A., Stadler W., Kerber A., Pompl T., Brodbeck T., Esmark K., and Bravaix A. Ultra-thin gate oxide reliability in the ESD time domain. In IEEE EOS/ESD Symposium Proceedings, pages 285–294, 2006. [Best Paper Award]

Secteur : Électronique et microélectronique

ESD protection structures characterization in advance CMOS processes (0.13 µm, 90 nm) on wafers, chips and products levels. A special focus on a high-performance RF-CMOS I/O circuits.

Secteur : Électronique et microélectronique

Feasibility studies for the monitoring and establishment of remote control systems from dedicated sensors used in the lamination process of steel.

Secteur : Sidérurgie et métallurgie