Adrien ILLE

ESD and Latch up development engineer

Sector: Electronics and microelectronics

PhD Student

Thin gate oxides reliability of deep sub-micron CMOS technologies under ESD stress.

Publications and Communications:

Ille A., Stadler W., Pompl T., Gossner H., Brodbeck T., Esmark K., Riess P., Alvarez D., Chatty K., Gauthier R., and Bravaix A. Reliability aspects of gate oxide under ESD pulse stress. In IEEE EOS/ESD Symposium Proceedings, pages 328–337, 2007.

Ille A., Stadler W., Gossner H., Brodbeck T., Pompl T., and Bravaix A. Thin gate oxides time-to-breakdown in the ESD time domain and consequences for applications. In International Electrostatic Discharge Workshop, pages 176–186, 2007.

Ille A., Stadler W., Kerber A., Pompl T., Brodbeck T., Esmark K., and Bravaix A. Ultra-thin gate oxide reliability in the ESD time domain. In 17th annual Reliability Center for Electronic Components of Japan Symposium, number ISSN 1349-6379, pages 75–84, 2007.

Ille A., Stadler W., Kerber A., Pompl T., Brodbeck T., Esmark K., and Bravaix A. Ultra-thin gate oxide reliability in the ESD time domain. In IEEE EOS/ESD Symposium Proceedings, pages 285–294, 2006. [Best Paper Award]

Sector: Electronics and microelectronics

Engineer traineeship

ESD protection structures characterization in advance CMOS process (0.13 µm, 90 nm) on wafers, chips and products levels. A special focus on a high-performance RF-CMOS I/O circuits.

Sector: Electronics and microelectronics

Technical traineeship

Feasibility studies for the monitoring and establishment of remote control systems from dedicated sensors used in the lamination process of steel.

Sector: Metallurgy